互补式金属氧化物半导体（简称互补式金氧半；英语：Complementary Metal-Oxide-Semiconductor，缩写：CMOS）乃是一种集成电路的设计制程，可以在硅质晶圆模板上制出NMOS（n-type MOSFET）和PMOS（p-type MOSFET）的基本组件，由于NMOS与PMOS在物理特性上为互补性，因此被称为CMOS。此一般的制程上，可用来制作电脑电器的静态随机访问内存、单片机、微处理器与其他数字逻辑电路系统、以及除此之外比较特别的技术特性，使它可以用于光学仪器上，例如互补式金氧半图像传感设备在一些高级数字相机中变得很常见。

Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).