Indium gallium nitride

Spectrum of a white-light LED where GaN or InGaN blue source pumps Ce:YAG phosphor

Indium gallium nitride (InGaN, In_xGa_1-xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. In_xGa_1-xN has a direct bandgap span from the infrared (0.69 eV) for InN to the ultraviolet (3.4 eV) of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.

单词	Indium gallium nitride
释义	Indium gallium nitride 英语百科 Indium gallium nitride Indium gallium nitride (InGaN, In_xGa_1-xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. In_xGa_1-xN has a direct bandgap span from the infrared (0.69 eV) for InN to the ultraviolet (3.4 eV) of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.
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