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单词 LOCal Oxidation of Silicon
释义

LOCal Oxidation of Silicon

英语百科

LOCOS

LOCOS process steps: I. Preparation of silicon substrate II. CVD deposition of SiO2, pad/buffer oxide III. CVD deposition of Si3N4, nitride mask IV. Etching of nitride layer and silicon oxide layer V. Thermal growth of silicon oxide VI. Further growth of thermal silicon oxide VII. Removal of nitride mask LOCOS process materials: 1) Si, silicon substrate 2) SiO2, pad/buffer oxide, chemical vapor deposition silicon oxide 3) Si3N4, nitride mask 4) SiO2, isolation oxide, thermal oxide
Fully recessed LOCOS structure process steps: I. Preparation of silicon substrate II. CVD deposition of SiO2, pad/buffer oxide III. CVD deposition of Si3N4, nitride mask IV. Etching of nitride layer and silicon oxide layer V. Silicon etching VI. Thermal growth of silicon oxide VII. Further growth of thermal silicon oxide VIII. Removal of nitride mask

LOCOS, short for LOCal Oxidation of Silicon, is a microfabrication process where silicon dioxide is formed in selected areas on a silicon wafer having the Si-SiO2 interface at a lower point than the rest of the silicon surface.

This technology was developed to insulate MOS transistors from each other. The main goal is to create a silicon oxide insulating structure that penetrates under the surface of the wafer, so that the Si-SiO2 interface occurs at a lower point than the rest of the silicon surface. This cannot be easily achieved by etching field oxide. Thermal oxidation of selected regions surrounding transistors is used instead. The oxygen penetrates in depth of the wafer, reacts with silicon and transforms it into silicon oxide. In this way, an immersed structure is formed.
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更新时间：2025/6/23 14:35:03