1. The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
   用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测量用计算机辅助系统的阻抗自动测量仪(LCR电桥)来完成。
2. For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
   另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

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