In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质，被预期能运用在磁性记忆体的元件和积体电路的材料上。
Gallium nitride
英语例句库
原声例句
中高级英语短文
The charging speed is 10 times faster than the iPhone and comes from a new material called GaN, or gallium nitride.
充电速度比 iPhone 快 10 倍，来自一种叫做氮化镓的新材料。
Did You Know? – Verge Science
The material we're after is called gallium nitride, or GaN.
我们正在寻找的材料称为氮化镓或 GaN。
Did You Know? – Verge Science
Right now, creating gallium nitride is expensive.
现在，制造氮化镓非常昂贵。
Did You Know? – Verge Science
Gallium nitride can pave the way for a whole new generation of miniaturized tech.
氮化镓可以为全新一代微型化技术铺平道路。
Did You Know? – Verge Science
And this, you need basically this gallium nitride electronics to make that happen.
而且，您基本上需要这种氮化镓电子设备才能实现这一目标。
Did You Know? – Verge Science
It's not super visible, but hidden inside this chip is gallium nitride.
它不是特别显眼，但隐藏在该芯片内部的是氮化镓。
Did You Know? – Verge Science
Gallium nitride has researchers like Martin sold.
氮化镓有像 Martin 这样的研究人员出售。
Did You Know? – Verge Science
Meanwhile, RavPower has also made a gallium nitride charger.
同时，RavPower也做了一款氮化镓充电器。
Did You Know? – Verge Science
It'll be a little while before gallium nitride takes over the world.
氮化镓占领世界还需要一段时间。
经济学人 Business
Chipmakers hope gradually to replace the silicon used in most processors with gallium nitride or silicon carbide, both of which can handle higher voltages.
芯片制造商希望逐步用氮化镓或碳化硅取代大多数处理器中使用的硅，这两种材料都可以处理更高的电压。
中文百科
氮化镓
氮化镓（GaN、Gallium nitride）是氮和镓的化合物，是一种直接能隙（direct bandgap）的半导体，自1990年起常用在发光二极管中。此化合物结构类似纤锌矿，硬度很高。氮化镓的能隙很宽，为3.4电子伏特，可以用在高功率、高速的光电组件中，例如氮化镓可以用在紫光的雷射二极管，可以在不使用非线性半导体泵浦固体激光器（Diode-pumped solid-state laser）的条件下，产生紫光（405 nm）雷射。
英语百科
Gallium nitride 氮化镓
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.
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