位错（英语：dislocation），在材料科学中，指晶体材料的一种内部微观缺陷，即原子的局部不规则排列（晶体学缺陷）。从几何角度看，位错属于一种线缺陷，可视为晶体中已滑移部分与未滑移部分的分界线，其存在对材料的物理性能，尤其是力学性能，具有极大的影响。“位错”这一概念最早由意大利数学家和物理学家维托·伏尔特拉于1905年提出。

理想位错主要有两种形式：刃位错（edge dislocations）和 螺旋位错（screw dislocations）。混合位错（mixed dislocations）兼有前面两者的特征。

In materials science, a dislocation is a crystallographic defect, or irregularity, within a crystal structure. The presence of dislocations strongly influences many of the properties of materials. The theory describing the elastic fields of the defects was originally developed by Vito Volterra in 1907, but the term 'dislocation' to refer to a defect on the atomic scale was coined by G. I. Taylor in 1934. Some types of dislocations can be visualized as being caused by the termination of a plane of atoms in the middle of a crystal. In such a case, the surrounding planes are not straight, but instead they bend around the edge of the terminating plane so that the crystal structure is perfectly ordered on either side. The analogy with a stack of paper is apt: if half a piece of paper is inserted in a stack of paper, the defect in the stack is only noticeable at the edge of the half sheet.