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单词 Czochralski process
释义

Czochralski process

中文百科

柴可拉斯基法

柴氏法示意图(从左到右)步骤一:多晶硅和掺杂物的熔化
步骤二:向熔融物中放入晶种
步骤三:晶体开始生长
步骤四:缓慢向上提拉棒,同时棒与下面的坩埚之间以反方向旋转
步骤五:单晶硅生长完成
硅晶棒,用于生产硅晶圆.
完成抛光的硅晶圆
图中所示为一个通过柴氏法生长单晶硅的提拉棒,其末端(左端)为晶种。

柴可拉斯基法(简称柴氏法 英语:Czochralski process),又称直拉法,是一种用来获取半导体(如硅、锗和砷化镓等)、金属(如钯、铂、银、金等)、盐、合成宝石单晶材料的晶体生长方法。这个方法得名于波兰科学家扬·柴可拉斯基,他在1916年研究金属的结晶速率时,发明了这种方法。后来,演变为钢铁工厂的标准制程之一。

直拉法最重要的应用是晶晶棒、单晶硅的生长。其他的半导体,例如砷化镓,也可以利用直拉法进行生长,尽管一些其他方法可以使获得单晶的晶体缺陷密度。

英语百科

Czochralski process 柴可拉斯基法

The Czochralski process
Silicon crystal being grown by Czochralski process at Raytheon, 1956.  The induction heating coil is visible, and the end of the crystal just emerging from the melt.  The technician is measuring the temperature with an optical pyrometer.   One of the earliest Si plants, the crystals produced by this early apparatus were only one inch in diameter.
A puller rod with seed crystal for growing single-crystal silicon by the Czochralski process.

The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The process is named after Polish scientist Jan Czochralski, who invented the method in 1916 while investigating the crystallization rates of metals. He made this discovery by accident, while studying the crystallization rate of metals when, instead of dipping his pen into the ink, he did so in molten tin and drew a tin filament, that later proved to be a single crystal.

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更新时间:2025/6/21 9:00:58