区域熔炼（或称区熔、区精炼、浮动区、浮区法、FZ法处理）是一类纯化晶体（如金属和半导体）的方法。晶体于一个狭窄的区域熔融，此熔化区是沿晶体移动（在实践中，晶体被拉动穿过加热器）。熔化区将不纯固体在固体前边缘熔化并将更纯的物质凝固在后边留下。重复上述过程最终将杂质集中于晶柱的一端，其余大部分的晶柱部分呈现成分较纯的固体。区精炼法由贝尔实验室的威廉·加德纳·普凡发明，用于制备高纯度晶体管材料。早期用于纯化锗，但它可以扩展到几乎所有的有明显的固相和液相之间的浓度平衡的溶质-溶剂系统。区域熔炼法现在已是重要的半导体制程之一。

Zone melting (or zone refining or floating zone process) is a group of similar methods of purifying crystals, in which a narrow region of a crystal is melted, and this molten zone is moved along the crystal. The molten region melts impure solid at its forward edge and leaves a wake of purer material solidified behind it as it moves through the ingot. The impurities concentrate in the melt, and are moved to one end of the ingot. Zone refining was developed by William Gardner Pfann in Bell Labs as a method to prepare high purity materials, mainly semiconductors, for manufacturing transistors. Its early use was on germanium for this purpose, but it can be extended to virtually any solute-solvent system having an appreciable concentration difference between solid and liquid phases at equilibrium. This process is also known as the float zone process, particularly in semiconductor materials processing.