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单词 Wire bonding
释义

Wire bonding

中文百科

打线接合

打线接合(英语:Wire bonding)是一种集成电路封装产业中的制程之一,利用线径15-50微米的金属线材将芯片(chip)及导线架(lead frame)连接起来的技术,使微小的芯片得以与外面的电路做沟通,而不需要增加太多的面积。其他类似的接合技术如覆晶接合(Flip-chip)或卷带式自动接合(Tape-Automated Bonding, TAB)都已经越趋成熟,虽然覆晶接合逐渐在吞食打线接合的市场,但目前仍以打线接合为最常见的接合技术。

英语百科

Wire bonding 打线接合

Gold wire ball-bonded to a gold contact pad
Aluminium wires wedge-bonded to a KSY34 transistor die
Germanium diode AAZ15 bonded with gold wire.
The interconnections in a power package are made using thick (250 to 400 µm), wedge-bonded, aluminium wires.

Wire bonding is the method of making interconnections between an integrated circuit (IC) or other semiconductor device and its packaging during semiconductor device fabrication. Although less common, wire bonding can be used to connect an IC to other electronics or to connect from one printed circuit board (PCB) to another. Wire bonding is generally considered the most cost-effective and flexible interconnect technology, and is used to assemble the vast majority of semiconductor packages. If properly designed, wire bonding can be used at frequencies above 100 GHz.<ref name="V. Valenta et al., "Design and experimental evaluation of compensated bondwire interconnects above 100 GHz">V. Valenta et al., "Design and experimental evaluation of compensated bondwire interconnects above 100 GHz, International Journal of Microwave and Wireless Technologies, 2015</ref>

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更新时间:2025/6/19 9:12:59