Tunnel field-effect transistor

Drain current vs. gate voltage for hypothetical TFET and MOSFET devices. The TFET may be able to achieve higher drain current for small voltages.

Energy band diagram for a basic lateral TFET structure. The device turns on' when sufficient gate voltage is applied such that electrons can tunnel from the source valence band to the channel conduction band.

The tunnel field-effect transistor (TFET) is a new type of transistor. Even though its structure is very similar to a metal-oxide-semiconductor field-effect (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low energy electronics. TFETs switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in traditional MOSFETs. Because of this, TFETs are not limited by the thermal Maxwell–Boltzmann tail of carriers, which limits the subthreshold swing of MOSFETs to 60 mV/dec at room temperature (exactly 63mV/dec. at 300K). Joerg Appenzeller and his colleagues at IBM were the first to demonstrate that current swings below the MOSFET’s 60-mV-per-decade limit were possible. In 2004, they reported they had created a tunnel transistor with a carbon nanotube channel and a subthreshold swing of just 40 mV per decade.

单词	Tunnel transistor
释义	Tunnel transistor 英语百科 Tunnel field-effect transistor The tunnel field-effect transistor (TFET) is a new type of transistor. Even though its structure is very similar to a metal-oxide-semiconductor field-effect (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low energy electronics. TFETs switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in traditional MOSFETs. Because of this, TFETs are not limited by the thermal Maxwell–Boltzmann tail of carriers, which limits the subthreshold swing of MOSFETs to 60 mV/dec at room temperature (exactly 63mV/dec. at 300K). Joerg Appenzeller and his colleagues at IBM were the first to demonstrate that current swings below the MOSFET’s 60-mV-per-decade limit were possible. In 2004, they reported they had created a tunnel transistor with a carbon nanotube channel and a subthreshold swing of just 40 mV per decade.
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Tunnel transistor

Tunnel field-effect transistor