p–n junction
A p–n junction is a boundary or interface between two types of semiconductor material, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of electron holes, while the "n" (negative) side contains an excess of electrons. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes.