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单词 Plasma etching
释义

Plasma etching

英语百科

Plasma etching

A microwave plasma etching apparatus. The microwave operates at 2.45 GHz. This frequency is generated by a magnetron and discharges through a rectangular and a round waveguide. The discharge area is in a quartz tube with an inner diameter of 66mm. Two coils and a permanent magnet are wrapped around the quartz tube to create a magnetic field which directs the plasma.
A quartz tube with an rf excitation of 30 MHz is shown. It is coupled with a coil around the tube with a power density of 2-10 W/cm³. The gas species is H2 gas in the chamber. The range of the gas pressure is 100-300 um.

Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma will generate volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma. Eventually the atoms of the shot element embed themselves at or just below the surface of the target, thus modifying the physical properties of the target.

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更新时间:2025/6/17 9:30:09