Memristor
![An array of 17 purpose-built oxygen-depleted titanium dioxide memristors built at HP Labs, imaged by an atomic force microscope. The wires are about 50 nm, or 150 atoms, wide.[12] Electric current through the memristors shifts the oxygen vacancies, causing a gradual and persistent change in electrical resistance.[13]](/uploads/202501/29/Memristor3728.jpg)
The memristor (/ˈmɛmrᵻstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept. According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way. The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history—the so-called non-volatility property. When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.