磁阻式随机访问内存（Magnetoresistive Random Access Memory，缩写为MRAM），是一种非挥发性内存技术，从1990年代开始发展。这个技术的拥护者认为，这个技术速度接近SRAM，具有闪存的非挥发性，容量密度及使用寿命不输DRAM，平均能耗远低于DRAM，成为真正的通用型内存（Universal memory）。

它应用巨磁阻效应为其工作原理。

Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology under development since the 1990s. Continued increases in density of existing memory technologies – notably flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that magnetoresistive RAM will eventually become dominant for all types of memory, becoming a universal memory.