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单词 MOSFET
释义

MOSFET /'mɔsfet/

英汉-汉英词典
abbr. 金属氧化物半导体场效应晶体管（Metal-Oxide -Semiconductor Field Effect Transistor）
词组 | 习惯用语
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  • most adv. 最；最多；非常，极其；几乎 adj. 最多的；大部分的，多数的
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  • motet n. 圣歌，赞美诗；赞歌
  • Samoset n. 萨莫赛特（北美印第安人领袖）
MOSFET abbr. 金属氧化物半导体场效应晶体管（Metal-Oxide -Semiconductor Field Effect Transistor）
mosfet gate 金属 氧化物 半导体场效应晶体管门电路

网络短语:
SiC-MOSFET 碳化硅场效应晶体管
buried-channel MOSFET 埋沟MOS场效晶体管；隐埋沟道mosfet
Photo MOSFET 光控继电器
SiC MOSFET 半导体场效应管; 碳化硅功率器件; 碳化硅MOS场效应晶体管;
RF MOSFET 射频场效应晶体管; 射频元件;
Subthreshold MOSFET 亚阈值MOSFET
LV MOSFET 低压场效应管
Short-channel MOSFET 短沟道MOSFET
enhancement MOSFET 增强型金属氧化物半导体场效应管
Power MOSFET 功率场效应晶体管；功率场效应管；电力场效应晶体管
英语例句库
  1. During the experimental test of the VDCS, high frequency interference, MOSFET protection and predrive circuit design were the key issues.
    在多功能驱动电路系统实验调试中，重点讨论了高频干扰问题、MOS管的高压保护和预驱动电路设计。

声明：以上例句、词性分类均由互联网资源自动生成，未经过人工审核，其表达内容亦不代表本软件的观点；若发现问题，欢迎向我们指正。

原声例句
DEFCON Collection

It can't pass this MOSFET, so the LED will be off.

它不能通过这个 MOSFET，因此 LED 将熄灭。

DEFCON Collection

This is just an N-channel MOSFET to see what these things actually do.

这只是一个 N 沟道 MOSFET，看看这些东西实际上做了什么。

DEFCON Collection

So the MOSFET doesn't really do what we expect anymore.

所以 MOSFET 不再真正发挥我们的预期作用。

DEFCON Collection

Then there is a certain threshold in this MOSFET where it starts to open up and starts to conduct current to turn on the LED.

然后在这个 MOSFET 中有一个特定的阈值，它开始打开并开始传导电流以打开 LED。

DEFCON Collection

So the setup time, for example, is you need some time to chain, so to charge up all the gates of the MOSFET in such a D flip-flop or wherever else.

因此，例如，设置时间是您需要一些时间来链接，以便为此类 D 触发器或其他任何地方的 MOSFET 的所有栅极充电。

DEFCON Collection

And a higher current means that we can put more charges into the gate capacitance and thereby turn the MOSFET on faster or discharge it faster and turn it off faster.

更高的电流意味着我们可以将更多的电荷放入栅极电容，从而更快地打开 MOSFET 或更快地放电并更快地关闭它。

英语百科

MOSFET 金属氧化物半导体场效电晶体

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white)
Two power MOSFETs in the surface-mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale.
A cross section through an nMOSFET when the gate voltage VGS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an n-type conductive channel in the substrate below the oxide, which allows electrons to flow between the n-doped terminals; the switch is on.
Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V.

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals.

Although the MOSFET is a four-terminal device with source (S), gate (G), drain (D), and body (B) terminals, the body (or substrate) of the MOSFET is often connected to the source terminal, making it a three-terminal device like other field-effect transistors. Because these two terminals are normally connected to each other (short-circuited) internally, only three terminals appear in electrical diagrams. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.
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更新时间：2025/6/18 13:17:10