氧化铟镓锌（英语：indium gallium zinc oxide，缩写：IGZO）是一种LCD薄膜晶体管显示器技术，IGZO技术由东京工业大学教授细野秀雄与日本科学技术振兴机构（JST）共同开发。IGZO技术可提高皮肤分辨率同时又降低成本，但IGZO皮肤对光、水以及氧都相当敏感，耐用度上只能用做民间消费品，不能用于高可靠度的军用或工业环境。

IGZO与非晶硅相比能够缩小晶体管尺寸，提高液晶皮肤像素的开口率，较易实现分辨率高出一倍，电子迁移率快十倍。成为OLED技术最大对手。

日本科学技术振兴机构（JST）把技术专利于2011年授权予三星电子，2012年夏普(Sharp)亦获得授权。

Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film transistor (TFT) is used in the TFT backplane of flat-panel displays (FPDs). IGZO-TFT was developed by Professor Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 (crystalline IGZO-TFT) and in 2004 (amorphous IGZO-TFT). IGZO-TFT has 20–50 times the electron mobility of amorphous silicon, which has often been used in liquid-crystal displays (LCDs) and e-papers. As a result, IGZO-TFT can improve the speed, resolution and size of flat-panel displays. It is thus considered to be one of the most promising thin-film transistors for use in organic light-emitting diode (OLED) displays.