热载流子注入（英语：Hot carrier injection, HCI）是固态电子器件中发生一个现象，当电子或空穴获得足够的动能后，它们就能够突破势垒的约束。这里“热”这个术语是指用来对载流子密度进行建模的有效温度，而非器件本身的温度。由于载流子被束缚在金属氧化物半导体场效应管的栅极电介质层中，晶体管的开关性能可以被永久地改变，热载流子注入是一种可能对半导体器件可靠性产生负面影响的机制

Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can become trapped in the gate dielectric of a MOS transistor, the switching characteristics of the transistor can be permanently changed. Hot-carrier injection is one of the mechanisms that adversely affects the reliability of semiconductors of solid-state devices.