Grown-junction transistor

（重定向自Grown junction transistor）

The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948 (patent filed June 26, 1948), six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs announced Shockley’s grown-junction transistor on July 4, 1951.

单词	Grown junction transistor
释义	Grown junction transistor 英语百科 Grown-junction transistor （重定向自Grown junction transistor） The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948 (patent filed June 26, 1948), six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs announced Shockley’s grown-junction transistor on July 4, 1951.
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