Extreme ultraviolet lithography

（重定向自EUVL）

Image formation mechanism in EUV lithography. Top: EUV multilayer and absorber (purple) constituting mask pattern for imaging a line. Bottom: EUV radiation (red) reflected from the mask pattern is absorbed in the resist (yellow) and substrate (brown), producing photoelectrons and secondary electrons (blue). These electrons increase the extent of chemical reactions in the resist. A secondary electron pattern that is random in nature is superimposed on the optical image. The unwanted secondary electron exposure results in loss of resolution, observable line edge roughness and linewidth variation.

$EUV (dipole) illumination angle across slit: The central angle of incidence on the EUV mask varies in 3D across the arc-shaped slit of illumination. Away from the center, the targeted dipole illumination causes light to emerge from the diffraction plane, degrading the image quality.$

EUV multilayer OAI reflectivity vs. half-pitch. Due to the off-axis illumination angle, a 4x projection system exhibits two different incidence angles on the multilayer mask for dipole illuminations optimized for different pattern pitches. As a result, the tighter pitches exhibit larger reflectivity differences. This strongly limits 2D patterning, especially at 14 nm half-pitch and below. The central ray angle of incidence here is 6°.

EUV shadowing effects at 16 nm half-pitch. For the 7 nm node, the expected 16 nm half-pitch shows significant shadowing effects.

Extreme ultraviolet lithography (also known as EUV or EUVL) is a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. EUV is currently being developed for possible future use in combination with immersion lithography at 32 nm pitch resolution, sometimes referred to as the 7 nm node. The primary EUV tool maker, ASML, projects EUV at 5 nm node to require a higher numerical aperture than currently available and multiple patterning to a greater degree than immersion lithography at 20 nm node. Immersion lithography is still more than 4 times faster than EUV (275 WPH vs. 65 WPH as detailed below), due to source power limitations; hence, multiple patterning with immersion lithography has already been used where EUV had previously been expected to be used. However, it is currently recognized that EUV cannot practically realize 40-50 nm pitch, due to stochastic effects in resist exposure, so even 10 nm node is off limits.

单词	EUVL
释义	EUVL 英语百科 Extreme ultraviolet lithography （重定向自EUVL） $EUV (dipole) illumination angle across slit: The central angle of incidence on the EUV mask varies in 3D across the arc-shaped slit of illumination. Away from the center, the targeted dipole illumination causes light to emerge from the diffraction plane, degrading the image quality.$ Extreme ultraviolet lithography (also known as EUV or EUVL) is a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. EUV is currently being developed for possible future use in combination with immersion lithography at 32 nm pitch resolution, sometimes referred to as the 7 nm node. The primary EUV tool maker, ASML, projects EUV at 5 nm node to require a higher numerical aperture than currently available and multiple patterning to a greater degree than immersion lithography at 20 nm node. Immersion lithography is still more than 4 times faster than EUV (275 WPH vs. 65 WPH as detailed below), due to source power limitations; hence, multiple patterning with immersion lithography has already been used where EUV had previously been expected to be used. However, it is currently recognized that EUV cannot practically realize 40-50 nm pitch, due to stochastic effects in resist exposure, so even 10 nm node is off limits.
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